New Diamond Transistor Exhibits High Hole Mobility Wpi Mana
TSUKUBA, Japan, July 29, 2022 /PRNewswire/ — A research team at the International Center for Materials Nanoarchitectonics (WPI-MANA), using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, which can lead to reduced conduction loss and higher operational speeds. (Image: https://kyodonewsprwire.jp/prwfile/release/M105739/202207153906/_prw_PI1fl_1IRPNuNx.jpg) Field-effect transistors (FETs) are semiconductor devices that can switch electric power and amplify electric signals. FETs made of wide-bandgap semiconductors can handle high power efficiently and are useful for power electronics and communications....